CDM22011-600LRFP
N-CHANNEL
LR POWER MOSFET
11 AMP, 600 VOLT
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DESCRIPTION:
The CENTRAL SEMICONDUCTOR CDM22011-600LRFP
is a 600 volt N-Channel MOSFET designed for high
voltage, fast switching applications such as Power
Factor Correction (PFC), lighting and power inverters.
This UltraMOSTM MOSFET combines high voltage
capability with ultra low rDS(ON), low threshold voltage,
and low gate charge for optimal efficiency.
MARKING CODE: CDM11-600LR
TO-220FP CASE
APPLICATIONS:
• Power Factor Correction
• Alternative energy inverters
• Solid State Lighting (SSL)
FEATURES:
• High voltage capability (VDS=600V)
• Low gate charge (Qgs=4.45nC TYP)
• Ultra low rDS(ON) (0.3Ω TYP)
MAXIMUM RATINGS: (TC=25°C unless otherwise noted)
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (Steady State)
ID
Maximum Pulsed Drain Current, tp=10μs
IDM
Continuous Source Current (Body Diode)
IS
Maximum Pulsed Source Current (Body Diode)
ISM
Single Pulse Avalanche Energy (Note 1)
EAS
Power Dissipation
PD
Operating and Storage Junction Temperature
TJ, Tstg
Thermal Resistance
JC
Thermal Resistance
JA
600
30
11
44
11
44
280
25
-55 to +150
5.0
120
UNITS
V
V
A
A
A
A
mJ
W
°C
°C/W
°C/W
Note 1: L=30mH, IAS=4.0A, VDD=100V, RG=25Ω, Initial TJ=25°C
ELECTRICAL CHARACTERISTICS: (TC=25°C unless
SYMBOL
TEST CONDITIONS
IGSSF, IGSSR VGS=30V, VDS=0
IDSS
VDS=600V, VGS=0
BVDSS
VGS=0, ID=250μA
VGS(th)
VGS=VDS, ID=250μA
VSD
VGS=0, IS=11A
rDS(ON)
VGS=10V, ID=5.5A
Crss
VDS=100V, VGS=0, f=1.0MHz
Ciss
VDS=100V, VGS=0, f=1.0MHz
Coss
VDS=100V, VGS=0, f=1.0MHz
otherwise noted)
MIN
TYP
0.047
600
2.0
3.09
0.92
0.30
2.76
763
52
MAX
100
1.0
4.0
1.4
0.36
UNITS
nA
μA
V
V
V
Ω
pF
pF
pF
R4 (19-August 2015)
CDM22011-600LRFP
N-CHANNEL
LR POWER MOSFET
11 AMP, 600 VOLT
ELECTRICAL
SYMBOL
Qg(tot)
Qgs
Qgd
td(on)
tr
td(off)
tf
trr
Qrr
CHARACTERISTICS - Continued: (TC=25°C unless otherwise noted)
TEST CONDITIONS
TYP
VDS=480V, VGS=10V, ID=11A (Note 2)
23.05
VDS=480V, VGS=10V, ID=11A (Note 2)
4.45
VDS=480V, VGS=10V, ID=11A (Note 2)
11.31
VDD=300V, VGS=10V, ID=11A, RG=25Ω (Note 2)
11
VDD=300V, VGS=10V, ID=11A, RG=25Ω (Note 2)
27
VDD=300V, VGS=10V, ID=11A, RG=25Ω (Note 2)
37
VDD=300V, VGS=10V, ID=11A, RG=25Ω (Note 2)
23
VGS=0, IS=11A, di/dt=100A/μs (Note 2)
315
VGS=0, IS=11A, di/dt=100A/μs (Note 2)
4.0
UNITS
nC
nC
nC
ns
ns
ns
ns
ns
μC
Note 2: Pulse Width < 300μs, Duty Cycle < 2%
TO-220FP CASE - MECHANICAL OUTLINE
R4
PIN CONFIGURATION
LEAD CODE:
1) Gate
2) Drain
3) Source
MARKING CODE: CDM11-600LR
R4 (19-August 2015)
w w w. c e n t r a l s e m i . c o m
CDM22011-600LRFP
N-CHANNEL
LR POWER MOSFET
11 AMP, 600 VOLT
TYPICAL ELECTRICAL CHARACTERISTICS
R4 (19-August 2015)
w w w. c e n t r a l s e m i . c o m
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